Micron Technology, Inc

Boise / Global

DRAM Process Integration Intern — Next-Gen Memory

$34.000 - $55.000

Job Summary

Salary Range:: $34.000 - $55.000

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Job Description

Micron Technology, Inc. invites applications for a 3D DRAM Process Integration Engineer Intern.

The role focuses on next‑generation DRAM technologies, device performance, reliability, and manufacturability, working in a state‑of‑the‑art 300mm R&D facility with multiple engineering disciplines. The ideal candidate is pursuing a PhD in Materials Science, Physics, or Chemical Engineering with experience in semiconductor fabrication and device physics, and is proficient in data‑driven problem

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Micron Technology, Inc

DRAM Process Integration Intern — Next-Gen Memory

Job Summary

Job Description

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Micron Technology, Inc

DRAM Process Integration Intern — Next-Gen Memory

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Job Description

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Similar Opportunities

Micron

Intern: Next-Gen DRAM Process Integration Engineer

Micron Technology, Inc.

DRAM Process Integration Engineer — R&D for Next-Gen Memory

Micron Technology, Inc

Intern: AI-Driven Process Integration for Next-Gen DRAM

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Micron Memory Malaysia Sdn Bhd

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DRAM Design Engineer: Shape Next-Gen Memory

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